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Vishay Intertechnology Electronic Components Datasheet

SI4431ADY Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si4431ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.030 @ VGS = - 10 V
- 30
0.052 @ VGS = - 4.5 V
ID (A)
- 7.2
- 5.5
FEATURES
D TrenchFETr Power MOSFET
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 30
"20
- 7.2 - 5.3
- 5.8 - 4.2
- 30
- 2.1 - 1.3
2.5 1.35
1.6 0.87
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71803
S-95713—Rev. C, 18-Feb-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
35
75
17
Maximum
50
92
25
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI4431ADY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4431ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = - 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 10 V
VDS = - 5 V, VGS = - 4.5 V
VGS = - 10 V, ID = - 7.2 A
VGS = - 4.5 V, ID = - 5.0 A
VDS = - 15 V, ID = - 7.2 A
IS = - 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 5 V, ID = - 7.2 A
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = - 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 1.0 V
"100
nA
-1
mA
- 10
- 30 A
-7 A
0.024
0.040
0.030
0.052
W
14 S
- 0.78
- 1.1
V
12 20
4.7 nC
3.7
12 20
15 20
40 60 ns
20 25
30 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 10 thru 5 V
24
18 4 V
12
6
3V
0
01234
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
5
Transfer Characteristics
30
24
18
12
6
0
0
TC = 125_C
25_C
- 55_C
1234
VGS - Gate-to-Source Voltage (V)
5
Document Number: 71803
S-95713—Rev. C, 18-Feb-02


Part Number SI4431ADY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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