900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI4429EDY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

New Product
P-Channel 30-V (D-S) MOSFET
Si4429EDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0105 @ VGS = –10 V
–30 0.0125 @ VGS = –4.5 V
0.0195 @ VGS = –2.5 V
ID (A)
–13.0
–12.0
–9.0
FEATURES
D TrenchFETr Power MOSFET
D VGS Surge Protection to 18 V
D ESD Protected: 4000 V
APPLICATIONS
D Battery Switch
D Load Switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
5.5 kW
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"12
–13.0
–9.4
–10.0
–7.5
–50
–2.5
–1.3
3.0 1.5
1.9 0.9
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4429EDY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4429EDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 13.0 A
VGS = 4.5 V, ID = 12.0 A
VGS = 2.5 V, ID = 9.0 A
VDS = 15 V, ID = 13.0 A
IS = 2.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 13.0 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Min Typ Max Unit
0.60
30
"20
1
5
0.0086
0.0105
0.0160
40
0.8
0.0105
0.0125
0.0195
1.2
V
mA
A
W
S
V
51 75
9 nC
12.0
14 21
19 29
ms
54 80
41 62
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
20
16
12
8
4
0
0 6 12 18 24 30
VGS Gate-to-Source Voltage (V)
10,000
1,000
100
Gate Current vs. Gate-Source Voltage
10
TJ = 150_C
1
0.1 TJ = 25_C
0.01
0
5 10 15
VGS Gate-to-Source Voltage (V)
20
www.vishay.com
2
Document Number: 70709
S-04712Rev. A, 24-Sep-01


Part Number SI4429EDY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
PDF Download

SI4429EDY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI4429EDY P-Channel 30-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy