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SI4413DY Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si4413DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0095 @ VGS = -10 V
-30
0.0145 @ VGS = -4.5 V
ID (A)
-13
- 10
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Notebook
- Load switch
- Battery switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
-30
"20
-13 -9
- 10.5
-7.5
-50
-2.7 -1.36
3.0 1.5
1.9 0.95
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72054
S-21977β€”Rev. A, 04-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4413DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4413DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = "20 V
VDS = -24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V, TJ = 70_C
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -13 A
VGS = -4.5 V, ID = -10 A
VDS = -15 V, ID = -13 A
IS = -2.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = -15 V, VGS = -5 V, ID = -13 A
VDD = -15 V, RL = 15 W
ID ^ -1 A, VGEN = -10 V, RG = 6 W
IF = -2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
-1.0 3.0 V
"100
nA
-1
mA
-10
-30 A
0.0075
0.0115
0.0095
0.0145
W
50 S
-0.74
-1.1
V
61 95
15.5
nC
32
21 35
18 30
ns
170 260
97 150
3.4 W
70 110 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 4 V
40
30
20
10
0
0
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2
3V
1234
VDS - Drain-to-Source Voltage (V)
2V
5
Transfer Characteristics
50
40
30
20
TC = 125_C
10
0
0.0
25_C
-55 _C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
4.0
Document Number: 72054
S-21977β€”Rev. A, 04-Nov-02


Part Number SI4413DY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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