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Vishay Intertechnology Electronic Components Datasheet

SI4370DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
Channel-1
Channel-2
30
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.022 @ VGS = 10 V
0.028 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30 0.50 V @ 1.0 A
ID (A)
7.5
6.5
7.5
6.5
IF (A)
2.0
FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
D1 D2
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol Channel-1 Channel-2 Channel-1 Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"12
"20
"12
7.5 5.7
6.0 4.6
30
1.7 0.9
2.0 1.1
1.3 0.7
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
MOSFET
Typ Max
52 62.5
93 110
35 40
Schottky
Typ Max
53 62.5
93 110
35 40
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4370DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4370DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "12 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
VDS = 15 V, ID = 7.5 A
IS = 1 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.0
0.8
20
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 4.5 V, ID = 7.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.5
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typa Max Unit
3.0
2.0
"100
"100
1
100
15
2000
0.014
0.015
0.024
0.020
19
21
0.75
0.47
0.022
0.022
0.030
0.028
1.2
0.5
V
nA
mA
A
W
S
V
7 11
11.5 18
2.9
3.8
nC
2.5
3.5
1.5 1.9
1.8 1.9 W
9 15
12 20
10 17
10 17
19 30
40 66 ns
9 15
9 15
35 55
28 45
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 1.0 A
IF = 1.0 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 100_C
Vr = 30 V, TJ = 125_C
Vr = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
www.vishay.com
2
Document Number: 72022
S-32621—Rev. C, 29-Dec-03


Part Number SI4370DY
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 9 Pages
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