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Vishay Intertechnology Electronic Components Datasheet

SI4362DY Datasheet

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET
Si4362DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V
0.0055 @ VGS = 4.5 V
ID (A)
20
19
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information:
Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
20
15
60
2.9
3.5
2.2
55 to 150
Unit
A
W
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4362DY Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4362DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 19 A
VDS = 15 V, ID = 20 A
IS = 2.9 A, VGS = 0 V
VDS = 15 V, VGS = 4.5 V, ID = 20 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 V
"100
1
5
nA
mA
30 A
0.0035
0.0042
90
0.75
0.0045
0.0055
1.1
W
S
V
42 55
12.8 nC
7.7
0.5 1.3 2.2 W
17 30
14 25
158 230 ns
43 65
50 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
50
40
30
20
10
0
0
www.vishay.com
2
Output Characteristics
VGS = 10 thru 3 V
2V
2468
VDS Drain-to-Source Voltage (V)
10
Transfer Characteristics
60
50
40
30
20
10
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
3.0
Document Number: 71628
S-40762—Rev. E, 19-Apr-04


Part Number SI4362DY
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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