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Vishay Intertechnology Electronic Components Datasheet

SI4340DY Datasheet

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Si4340DY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
Channel-1
Channel-2
20
0.012 @ VGS = 10 V
0.0175 @ VGS = 4.5 V
0.010 @ VGS = 10 V
0.0115 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
20 0.53 V @ 3 A
ID (A)
9.6
7.8
13.5
12.8
IF (A)
2.0
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
- Game Stations
- Notebook PC Logic
D1 1
D1 2
G1 3
G2 4
S2 5
S2 6
S2 7
SO-14
Top View
14 S1
13 S1
12 D2
11 D2
10 D2
9 D2
8 D2
D1
G1
Ordering Information: Si4340DY
Si4340DY-T1 (with Tape and Reel)
S1
N-Channel 1
MOSFET
G2
D2
Schottky Diode
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
9.6
7.7
1.8
2.0
1.28
"20
40
7.3
5.8
1.04
1.14
0.73
20
13.5
10.8
2.73
3.0
1.9
- 55 to 150
"16
50
9.5
7.5
1.30
1.43
0.91
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
Document Number: 72376
S-31857—Rev. A, 15-Sep-03
Channel-1
Typ Max
53 62.5
92 110
35 42
Channel-2
Typ Max
35 42
72 87
18 23
Schottky
Typ Max
40 48
76 93
21 25
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI4340DY Datasheet

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4340DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 9.6 A
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 7.8 A
VGS = 4.5 V, ID = 12.8 A
VDS = 15 V, ID = 9.6 A
VDS = 15 V, ID = 13.5 A
IS = 1.8 A, VGS = 0 V
IS = 2.73 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.8
20
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 9.6 A
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = - 13.5 A
f = 1 MHz
Channel-1
VDD = 01 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 01 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.8 A, di/dt = 100 A/ms
IF = 2.73 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.45
0.7
Typa Max Unit
2.00
1.90
100
100
1
100
15
4000
0.0095
0.007
0.0135
0.0085
25
38
0.74
0.485
0.012
0.010
0.0175
0.0115
1.1
0.53
V
nA
mA
A
W
S
V
10 15
17 25
3.3
4.5
nC
3.1
4.5
0.9 1.35
1.4 2.1 W
15 25
24 35
16 25
22 35
42 65
68 100 ns
16 25
19 30
35 60
38 65
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 3 A
IF = 3 A, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 75_C
Vr = - 20 V, TJ = 125_C
Vr = 15 V
www.vishay.com
2
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.42
0.100
5
20
Unit
V
mA
pF
Document Number: 72376
S-31857—Rev. A, 15-Sep-03


Part Number SI4340DY
Description Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 9 Pages
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