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Vishay Intertechnology Electronic Components Datasheet

SI3905DV Datasheet

Dual P-Channel 8-V (D-S) MOSFET

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Si3905DV
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.125 @ VGS = –4.5 V
–8 0.175 @ VGS = –2.5 V
0.265 @ VGS = –1.8 V
ID (A)
"2.5
"2.0
"1.7
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
D1
S1
D2
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–8
"8
"2.5
"2.0
"7
–1.05
1.15
0.73
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec
Document Number: 70973
S-61840—Rev. A, 13-Sep-99
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJL
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI3905DV Datasheet

Dual P-Channel 8-V (D-S) MOSFET

No Preview Available !

Si3905DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 55_C
VDS = v–5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –2.5 A
VGS = –2.5 V, ID = –2.0 A
VGS = –1.8 V, ID = –1 A
VDS = –4.5 V, ID = –2.5 A
IS = –1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –5 V, VGS = –4.5 V, ID = –2.5 A
VDD = –5 V, RL = 5 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.05 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
–5
0.103
0.146
0.205
5.3
–0.79
"100
–1
–5
0.125
0.175
0.265
–1.1
V
nA
mA
A
W
S
V
4.2 6
0.45
nC
0.90
10 15
47 70
ns
28 45
34 50
20 40 ns
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70973
S-61840—Rev. A, 13-Sep-99


Part Number SI3905DV
Description Dual P-Channel 8-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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