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SI3493DV Datasheet

P-Channel 20-V (D-S) MOSFET

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P-Channel 20-V (D-S) MOSFET
Si3493DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.027 @ VGS = 4.5 V
20 0.035 @ VGS = 2.5 V
0.048 @ VGS = 1.8 V
ID (A)
7
6.2
5.2
Qg (Typ)
21
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra-Low On-Resistance
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3493DV-T1
Si3493DV-T1—E3 (Lead (Pb)-Free)
Marking Code:
93xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
7 5.3
3.6
3.9
20
1.7
0.9
2.0 1.1
1.0 0.6
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3493DV Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si3493DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 7 A
VGS = 2.5 V, ID = 6.2 A
VGS = 1.8 V, ID = 3 A
VDS = 5 V, ID = 7 A
IS = 1.7 A, VGS = 0 V
0.40
20
0.022
0.029
0.039
25
0.7
1
"100
1
5
0.027
0.035
0.048
1.2
V
nA
mA
A
W
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 7 A
ID
^
V1DAD,=VG1E0N
V,
=
R4L.5=V1,0RWg
=
6
W
IF = 1.7 A, di/dt = 100 A/ms
21 32
2.6 nC
6
20 30
40 60
125 190 ns
85 130
64 90
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
16
12
1.5 V
8
4
0
0
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2
1V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
20
16
12
8
TC = 125_C
4
25_C
55_C
0
0.0 0.4 0.8 1.2 1.6 2.0
VGS Gate-to-Source Voltage (V)
Document Number: 71936
S-41796—Rev. C, 04-Oct-04


Part Number SI3493DV
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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