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SI3473DV Datasheet

P-Channel 12-V (D-S) MOSFET

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P-Channel 12-V (D-S) MOSFET
Si3473DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.023 @ VGS = -4.5 V
-12 0.029 @ VGS = -2.5 V
0.041 @ VGS = -1.8 V
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
ID (A)
-7.9
- 7.0
- 5.9
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra Low On-Resistance
APPLICATIONS
D Load Switch
D PA Switch
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 7.9
-5.9
- 5.7
-4.3
-20
-1.7 -0.9
2.0 1.1
1.0 0.6
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71937
S-22122β€”Rev. B, 25-Nov-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3473DV Datasheet

P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si3473DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = "8 V
VDS = -9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V, TJ = 85_C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -7.9 A
VGS = -2.5 V, ID = -7.0 A
VGS = -1.8 V, ID = -3 A
VDS = -5 V, ID = -7.9 A
IS = -1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = -6 V, VGS = -4.5 V, ID = -7.9 A
VDD = -6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = -1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.40
-20
-1
"100
-1
-5
0.019
0.024
0.033
28
-0.7
0.023
0.029
0.041
-1.2
V
nA
mA
A
W
S
V
22 33
3.2 nC
5.8
25 40
50 75
130 200 ns
110 165
65 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
16
1.5 V
12
8
4
0
0
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2
1V
1234
VDS - Drain-to-Source Voltage (V)
5
20
16
12
8
4
0
0.0
Transfer Characteristics
TC = 125_C
25_C
-55 _C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 71937
S-22122β€”Rev. B, 25-Nov-02


Part Number SI3473DV
Description P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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