Si3473DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -250 mA
VDS = 0 V, VGS = "8 V
VDS = -9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V, TJ = 85_C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -7.9 A
VGS = -2.5 V, ID = -7.0 A
VGS = -1.8 V, ID = -3 A
VDS = -5 V, ID = -7.9 A
IS = -1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = -6 V, VGS = -4.5 V, ID = -7.9 A
VDD = -6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = -1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.40
-20
-1
"100
-1
-5
0.019
0.024
0.033
28
-0.7
0.023
0.029
0.041
-1.2
V
nA
mA
A
W
S
V
22 33
3.2 nC
5.8
25 40
50 75
130 200 ns
110 165
65 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
16
1.5 V
12
8
4
0
0
www.vishay.com
2
1V
1234
VDS - Drain-to-Source Voltage (V)
5
20
16
12
8
4
0
0.0
Transfer Characteristics
TC = 125_C
25_C
-55 _C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 71937
S-22122—Rev. B, 25-Nov-02
