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Vishay Intertechnology Electronic Components Datasheet

SI3460DV Datasheet

N-Channel 20-V (D-S) MOSFET

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N-Channel 20-V (D-S) MOSFET
Si3460DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.027 @ VGS = 4.5 V
0.032 @ VGS = 2.5 V
0.038 @ VGS = 1.8 V
ID (A)
6.8
6.3
5.7
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3460DV-T1
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"8
6.8 5.1
5.4 4.1
20
1.7 0.9
2.0 1.1
1.3 0.73
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71329
S-31725—Rev. b, 18-Aug-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3460DV Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si3460DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VGS = 4.5 V, ID = 5.1 A
VGS = 2.5 V, ID = 4.7 A
VGS = 1.8 V, ID = 2 A
VDS = 10 V, ID = 5.1 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 5.1 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.45
20
"100
1
5
0.023
0.027
0.032
25
0.8
0.027
0.032
0.038
1.2
V
nA
mA
A
W
S
V
13.5 20
2.3 nC
2.2
0.5 2.9 W
15 30
30 60
70 140 ns
30 60
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
16
12
1.5 V
8
4
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
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2
20
16
12
8
4
0
0.0
Transfer Characteristics
TC = -55_C
25_C
125_C
0.4 0.8 1.2 1.6
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 71329
S-31725—Rev. b, 18-Aug-03


Part Number SI3460DV
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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