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SI3457BDV Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si3457BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.054 @ VGS = 10 V
30
0.100 @ VGS = 4.5 V
ID (A)
5.0
3.7
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3457BDV-T1
Si3457BDV-T1—E3 (Lead Free)
Marking Code:
7Bxxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
5.0
3.7
4.0
3.0
20
1.7
0.95
2.0 1.14
1.3 0.73
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72019
S-40424—Rev. D, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
53
90
25
Maximum
62.5
110
36
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3457BDV Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3457BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 5.0 A
VGS = 4.5 V, ID = 3.7 A
VDS = 15 V, ID = 5.0 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 5.0 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
20
3
"100
1
5
0.044
0.082
10
0.8
0.054
0.100
1.2
V
nA
mA
A
W
S
V
12.5
19
2.1 nC
3.5
7 15
10 15
30 45 ns
22 35
25 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 5 V
16
20
16
12 12
4V
88
4
3V
0
0123456
VDS Drain-to-Source Voltage (V)
4
0
0
Transfer Characteristics
TC = 125_C
25_C
55_C
1234
VGS Gate-to-Source Voltage (V)
5
www.vishay.com
2
Document Number: 72019
S-40424—Rev. D, 15-Mar-04


Part Number SI3457BDV
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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