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SI3447BDV Datasheet

P-Channel 12-V (D-S) MOSFET

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P-Channel 12-V (D-S) MOSFET
Si3447BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.040 @ VGS = 4.5 V
12 0.053 @ VGS = 2.5 V
0.072 @ VGS = 1.8 V
ID (A)
6.0
5.2
4.5
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra Low On-Resistance
APPLICATIONS
D Load Switch
D PA Switch
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3447BDV-T1
Si3447BDV-T1—E3 (Lead Free)
Marking Code:
B7xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
6.0
4.5
4.3
3.3
20
1.7
0.9
2.0 1.1
1.0 0.6
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3447BDV Datasheet

P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si3447BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 6.0 A
VGS = 2.5 V, ID = 5.2 A
VGS = 1.8 V, ID = 2.0 A
VDS = 5 V, ID = 6.0 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 6 V, VGS = 4.5 V, ID = 6.0 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.45
20
0.033
0.044
0.060
15
0.7
1
"100
1
5
0.040
0.053
0.072
1.2
V
nA
mA
A
W
S
V
9.3 14
1.5 nC
2.6
20 30
46 70
62 95 ns
62 95
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2.5 V
16
2V
12
8
1.5 V
4
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
TC = 55_C
16 25_C
12 125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
Document Number: 72020
S-40424—Rev. B, 15-Mar-04


Part Number SI3447BDV
Description P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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