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Vishay Intertechnology Electronic Components Datasheet

SI2331DS Datasheet

P-Channel 1.8-V (G-S) MOSFET

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SPICE Device Model Si2331DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72307
30-Apr-04
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2331DS Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

SPICE Device Model Si2331DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.2 Α
VGS = 1.8 V, ID = 2.7 Α
VDS = 5 V, ID = 3.6 A
IS = 1.6 V, VGS = 0 V
VDS = 6 V, VGS = 4.5 V, ID = 3.6 A
VDD = 6 V, RL = 6
ID ≅ −1 A, VGEN = 10 V, RG = 6
Simulated Measured
Data
Data
0.72
94
0.035
0.046
0.062
14
0.80
0.038
0.049
0.070
3
8.2 9
1.3 1.3
2.5 2.5
20 20
21 35
66 65
15 50
Unit
V
A
S
V
nC
ns
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72307
30-Apr-04


Part Number SI2331DS
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 3 Pages
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