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SI2316DS Datasheet

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET
Si2316DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.050 at VGS = 10 V
0.085 at VGS = 4.5 V
ID (A)
3.4
2.6
FEATURES
Halogen-free Option Available
TrenchFET® Power MOSFET
APPLICATIONS
• Battery Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2316DS (C6)*
* Marking Code
Ordering Information: Si2316DS-T1
Si2316DS-T1-E3 (Lead (Pb)-free)
Si2316DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
3.4 2.9
2.7 2.3
Pulsed Drain Currentb
IDM 16
Continuous Source Current (Diode Conduction)a, b
IS 0.8
Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
0.96 0.7
0.6 0.45
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
RthJA
RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
Typical
100
140
60
Maximum
130
175
75
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2316DS Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si2316DS
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 4.5 V, VGS = 10 V
VDS 4.5 V, VGS = 4.5 V
VGS = 10 V, ID = 3.4 A
VGS = 4.5 V, ID = 2.6 A
VDS = 4.5 V, ID = 3.4 A
Diode Forward Voltage
Dynamicb
VSD IS = 0.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 15 V, VGS = 10 V, ID = 3.4 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1.0 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Notes:
a. Pulse test; PW 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
0.8
6
4
Limits
Typ.
Max.
± 100
0.5
10
0.042
0.068
6.0
0.8
0.050
0.085
1.2
Unit
V
nA
µA
A
Ω
S
V
4.3
0.65
1.2
215
90
55
9
9
14
6
7
15
15
20
12
nC
pF
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16
VGS = 10 thru 5 V
14
16
14
12 12
4V
10 10
88
6
3V
4
2
2V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4 TC = 125 °C
2 25 °C
- 55 °C
0
012345
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71798
S-80642-Rev. C, 24-Mar-08


Part Number SI2316DS
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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