900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI2315DS Datasheet

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

No Preview Available !

Si2315DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 12
rDS(on) (W)
0.055 @ VGS = - 4.5 V
0.075 @ VGS = - 2.5 V
0.118 @ VGS = - 1.8 V
ID (A)
"3.5
"3
"2
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2315DS (C5)*
*Marking Code
Ordering Information: Si2315DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 12
"8
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
"3.5
"2.8
"12
- 1.6
1.25
0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 5 sec
Steady State
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70850
S-31990—Rev. C, 13-Oct-03
Typical
130
Maximum
100
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2315DS Datasheet

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

No Preview Available !

Si2315DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = - 10 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 55_C
VDS v - 5 V, VGS = - 4.5 V
VDS v - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 3.5 A
VGS = - 2.5 V, ID = - 3 A
VGS = - 1.8 V, ID = - 2 A
VDS = - 5 V, ID = - 3.5 A
IS = - 1.6 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 6 V, VGS = - 4.5 V
ID ^ - 3.5 A
VDS = - 6 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 W
ID ^ - 1.0 A, VGEN = - 4.5 V
RG = 6 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min
- 12
- 0.45
-6
-3
Limits
Typ
Max
"100
-1
- 10
0.045
0.063
0.093
7
0.055
0.075
0.118
- 1.2
9
1.9
1.5
1225
260
130
15
13.0
15
50
19
20
25
70
35
Unit
V
nA
mA
A
W
S
V
nC
pF
ns
www.vishay.com
2
Document Number: 70850
S-31990—Rev. C, 13-Oct-03


Part Number SI2315DS
Description P-Channel 1.25-W/ 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI2315DS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI2315DS P-Channel 1.25-W/ 1.8-V (G-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy