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SI2315BDS Datasheet

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8-V (G-S) MOSFET
Si2315BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.050 @ VGS = - 4.5 V
- 12 0.065 @ VGS = - 2.5 V
0.100 @ VGS = - 1.8 V
ID (A)
- 3.85
- 3.4
- 2.7
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2315BDS-T1
Top View
Si2315BDS *(M5)
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 3.85
- 3.0
- 1.0
1.19
0.76
- 12
"8
- 12
- 55 to 150
- 3.0
- 2.45
- 0.62
0.75
0.48
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t  5 sec.
Steady State
RthJA
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72014
S-31990—Rev. D, 13-Oct-03
Typical
85
130
60
Maximum
105
166
75
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2315BDS Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si2315BDS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = - 10 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 55_C
VDS v - 5 V, VGS = - 4.5 V
VDS v - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 3.85 A
VGS = - 2.5 V, ID = - 3.4 A
VGS = - 1.8 V, ID = - 2.7 A
VDS = - 5 V, ID = - 3.85 A
IS = - 1.6 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 6 V, VGS = - 4.5 V
ID ^ - 3.85 A
VDS = - 6 V, VGS = 0, f = 1 MHz
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 W
ID ^ - 1.0 A, VGEN = - 4.5 V
RG = 6 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min
- 12
- 0.45
-6
-3
Limits
Typ
Max
- 0.90
"100
-1
- 10
0.040
0.050
0.071
7
0.050
0.065
0.100
- 1.2
8 15
1.1
2.3
715
275
200
15 20
35 50
50 70
50 75
Unit
V
nA
mA
A
W
S
V
nC
pF
ns
www.vishay.com
2
Document Number: 72014
S-31990—Rev. D, 13-Oct-03


Part Number SI2315BDS
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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