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SI2303DS Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si2303DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.240 @ VGS = –10 V
0.460 @ VGS = –4.5 V
ID (A)
–1.7
–1.3
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303DS (A3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS –30
VGS "20
Continuous Drain Current (TJ = 150_C)
(surface mounted on FR4 board, t v 5 sec)
Pulsed Drain Currenta
Continuous Source Current (MOSFET Diode Conduction)
(surface mounted on FR4 board, t v 5 sec)
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
–1.7
–1.4
–10
–1.25
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (surface mounted on FR4 board, t v 5 sec)
Maximum Junction-to-Ambient (surface mounted on FR4 board)
Symbol
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70770
S-49557—Rev. B, 27-Apr-98
Typical
100
166
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI2303DS Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si2303DS
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V, TJ = 55_C
VDS w –5 V, VGS = –10 V
VGS = –10 V, ID = –1.7 A
VGS = –4.5 V, ID = –1.3 A
VDS = –10 V, ID = –1.7 A
IS = –1.25 A, VGS = 0 V
–30
–1.0
–6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = –15 V, VGS = –10 V, ID = –1.7 A
VDS = –15 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Typ
0.190
0.240
2.4
–0.8
5.8
0.8
1.5
226
87
19
9
9
18
6
Max Unit
"100
–1
–10
0.240
0.460
–1.2
V
nA
mA
A
W
S
V
10
nC
pF
20
20
ns
35
20
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70770
S-49557—Rev. B, 27-Apr-98


Part Number SI2303DS
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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