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Vishay Intertechnology Electronic Components Datasheet

SI2302ADS Datasheet

N-Channel 1.25-W/ 2.5-V MOSFET

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Si2302ADS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.060 @ VGS = 4.5 V
20
0.115 @ VGS = 2.5 V
ID (A)
2.4
2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302DS (2A)*
*Marking Code
Ordering Information: Si2302ADS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
2.4
1.9
0.94
0.9
0.57
20
8
10
--55 to 150
2.1
1.7
0.6
0.7
0.46
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t ± 5 sec.
Steady State
RthJA
Notes
a. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Typical
115
140
Maximum
140
175
Unit
_C/W
Document Number: 71831
S-41772—Rev. D, 20-Sep-04
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI2302ADS Datasheet

N-Channel 1.25-W/ 2.5-V MOSFET

No Preview Available !

Si2302ADS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 50 mA
VDS = 0 V, VGS = 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS 5 V, VGS = 4.5 V
VDS 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
VDS = 5 V, ID = 3.6 A
IS = 0.94 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = 10 V, RL = 2.8
ID 3.6 A, VGEN = 4.5 V, Rg = 6
Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b. Effective for production 10/04.
Min Typ Max Unit
20
0.65 0.95
1.2
100
1
10
6
4
0.045 0.060b
0.070 0.115
8
0.76 1.2
V
nA
mA
A
S
V
4.0 10
0.65
1.5
300
120
80
nC
pF
7 15
55 80
ns
16 60
10 25
www.vishay.com
2
Document Number: 71831
S-41772—Rev. D, 20-Sep-04


Part Number SI2302ADS
Description N-Channel 1.25-W/ 2.5-V MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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