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Vishay Intertechnology Electronic Components Datasheet

SI1917EDH Datasheet

Dual P-Channel 12-V (D-S) MOSFET

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Si1917EDH
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.370 @ VGS = –4.5 V
–12 0.575 @ VGS = –2.5 V
0.800 @ VGS = –1.8 V
ID (A)
–1.15
–0.92
–0.78
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
Marking Code
G
DB XX
Lot Traceability
and Date Code
Part # Code
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
DD
3 kW
3 kW
G
SS
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS –12
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
–1.15
–1.00
–0.83
–0.73
–3
–0.61
–0.47
0.73
0.57
0.38
0.30
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI1917EDH Datasheet

Dual P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si1917EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 100 mA
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 9.6 V, VGS = 0 V
VDS = 9.6 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.0 A
VGS = 2.5 V, ID = 0.81 A
VGS = 1.8 V, ID = 0.2 A
VDS = 10 V, ID = 1.0 A
IS = 0.47 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 6 V, VGS = 4.5 V, ID = 1.0 A
VDD = 6 V, RL = 12 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
Min Typ Max Unit
0.45
2
0.300
0.470
0.660
1.7
0.85
"1.5
"10
1
5
0.370
0.575
0.800
1.2
V
mA
mA
mA
A
W
S
V
1.3
0.31
0.31
0.17
0.47
0.96
1.0
2.0
0.26
0.71
1.4
1.5
nC
ms
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
2
0
0
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2
4 8 12
VGS Gate-to-Source Voltage (V)
16
10,000
1,000
100
10
Gate Current vs. Gate-Source Voltage
TJ = 150_C
1
0.1
0.01
TJ = 25_C
0.001
0
36
9 12
VGS Gate-to-Source Voltage (V)
15
Document Number: 71414
S-03174Rev. A, 07-Mar-01


Part Number SI1917EDH
Description Dual P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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