900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI1912EDH Datasheet

Dual N-Channel 20-V (D-S) MOSFET

No Preview Available !

New Product
Si1912EDH
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.280 @ VGS = 4.5 V
20 0.360 @ VGS = 2.5 V
0.450 @ VGS = 1.8 V
ID (A)
1.28
1.13
1.0
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
Marking Code
CA XX
Lot Traceability
and Date Code
Part # Code
G
1 kW
D
1 kW
G
S
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
1.28
1.13
0.92
0.81
4
0.61
0.48
0.74
0.57
0.38
0.30
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71408
S-03176—Rev. A, 05-Mar-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1912EDH Datasheet

Dual N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1912EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 100 mA
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.13 A
VGS = 2.5 V, ID = 0.99 A
VGS = 1.8 V, ID = 0.2 A
VDS = 10 V, ID = 1.13 A
IS = 0.48 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 1.13 A
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
Min Typ Max Unit
0.45
2
"1
"10
1
5
0.220
0.281
0.344
2.6
0.80
0.280
0.360
0.450
1.2
V
mA
mA
mA
A
W
S
V
0.65
1.0
0.2 nC
0.23
45 70
85 130
ns
350 530
210 320
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
2
0
0
www.vishay.com
2
4 8 12
VGS Gate-to-Source Voltage (V)
16
10,000
1,000
100
10
1
Gate Current vs. Gate-Source Voltage
TJ = 150_C
0.1
0.01
TJ = 25_C
0.001
0
3 6 9 12
VGS Gate-to-Source Voltage (V)
15
Document Number: 71408
S-03176Rev. A, 05-Mar-01


Part Number SI1912EDH
Description Dual N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
PDF Download

SI1912EDH Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI1912EDH Dual N-Channel 20-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy