900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI1433DH Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

New Product
P-Channel 30-V (D-S) MOSFET
Si1433DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.150 @ VGS = - 10 V
- 30
0.260 @ VGS = - 4.5 V
ID (A)
- 2.2
- 1.6
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switches
- Notebook PCs
- Servers
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Ordering Information: Si1433DH-T1
Marking Code
BE XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS - 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 2.2 - 1.9
- 1.7 - 1.4
-8
- 1.4 - 0.9
1.45
0.95
0.75
0.5
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
65
105
38
Maximum
85
130
48
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1433DH Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si1433DH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 100 mA
VDS = 0 V, VGS = "8 V
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85_C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 10 V, ID = - 2.2 A
VGS = - 4.5 V, ID = - 1.6 A
VDS = - 10 V, ID = - 2.2 A
IS = - 1.2 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-1 -3 V
"100
nA
-1
mA
-5
-4 A
0.120
0.210
0.150
0.260
W
4
- 0.85
- 1.2
S
V
3.1 5
1.0 nC
1.6
11 17
17 26
ns
18 27
13 20
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
VGS = 10 thru 5 V
7
6
5
4V
4
3
2
1
3V
0
012345
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
8
TC = - 55_C
7
25_C
6
5
125_C
4
3
2
1
0
01234
VGS - Gate-to-Source Voltage (V)
5
Document Number: 72323
S-31668—Rev. A, 11-Aug-03


Part Number SI1433DH
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
PDF Download

SI1433DH Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI1433DH P-Channel 30-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy