The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive.
| Part number | SI1317DL |
|---|---|
| Manufacturer | Vishay |
| File Size | 248.54 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SI1317DL Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| Si1315DL | P-Channel MOSFET | Vishay |
| SI1304BDL | N-Channel 20V MOSFET | VBsemi |
| Si1305EDL | P-Channel MOSFET | Vishay |
| SI1308EDL | N-Channel MOSFET | Vishay |
| SI1000 | (SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | NTE Electronics |
| Part Number | Description |
|---|---|
| SI1300BDL | N-Channel MOSFET |
| SI1300DL | N-Channel 20-V (D-S) MOSFET |
| SI1301DL | P-Channel 20-V (D-S) MOSFET |
| SI1302DL | N-Channel MOSFET |
| SI1303DL | P-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
