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Vishay Intertechnology Electronic Components Datasheet

SI1029X Datasheet

Complementary N- and P-Channel 60-V (D-S) MOSFET

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Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel
1.40 at VGS = 10 V
60
3 at VGS = 4.5 V
4 at VGS = - 10 V
P-Channel
- 60
8 at VGS = - 4.5 V
ID (mA)
500
200
- 500
- 25
S1 1
G1 2
SC-89
6 D1
5 G2
Marking Code: H
D2 3
4 S2
Top View
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 1.40
P-Channel, 4
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 60
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
320
230
305
- 200
- 190
220
- 145
- 135
Pulsed Drain Currentb
IDM 650
- 650
Continuous Source Current (Diode Conduction)a
IS 450
380
- 450
- 380
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
280
145
250
130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
°C
V
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1029X Datasheet

Complementary N- and P-Channel 60-V (D-S) MOSFET

No Preview Available !

Si1029X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
Gate Threshold Voltage
VGS(th)
VGS = 0 V, ID = 10 µA
VGS = 0 V, ID = - 10 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
VDS = 0 V, VGS = ± 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 50 V, VGS = 0 V
VDS = - 50 V, VGS = 0 V
VDS = 50 V, VGS = 0 V, TJ = 85 °C
VDS = - 50 V, VGS = 0 V, TJ = 85 °C
VDS = 10 V, VGS = 4.5 V
VDS = - 10 V, VGS = - 4.5 V
VDS = 7.5 V, VGS = - 4.5 V
VDS = - 10 V, VGS = - 10 V
VGS = 4.5 V, ID = 200 mA
VGS = - 4.5 V, ID = - 25 mA
VGS = 10 V, ID = 500 mA
VGS = - 10 V, ID = - 500 mA
VGS = 10 V, ID = 500 mA, TJ = 125 °C
VGS = - 10 V, ID = - 500 mA, TJ = 125 °C
VDS = 10 V, ID = 200 mA
VDS = - 10 V, ID = - 100 mA
IS = 200 mA, VGS = 0 V
IS = - 200 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
Qgs
P-Channel
Qgd VDS = - 30 V, VGS = - 15 V, ID = - 500 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Timec
Turn-Off Timec
Ciss
Coss
Crss
tON
tOFF
N-Channel
VDS = 25 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 25 V, VGS = 0 V, f = 1 MHz
N-Channel
VDD = 30 V, RL = 150
ID 200 mA, VGEN = 10 V, Rg = 10
P-Channel
VDD = - 25 V, RL = 150
ID - 165 mA, VGEN = - 10 V, Rg = 10
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
60
- 60
1
-1
500
- 50
800
- 600
Typ.
200
100
750
1700
75
260
225
460
30
23
6
10
3
5
15
20
20
35
Max. Unit
2.5
- 3.0
± 50
± 100
± 150
± 200
10
- 25
100
- 250
V
nA
mA
3
8
1.40
4
2.50
6
1.4
- 1.4
ms
V
pC
pF
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10


Part Number SI1029X
Description Complementary N- and P-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 10 Pages
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Vishay Siliconix





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