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Vishay Intertechnology Electronic Components Datasheet

SI1026X Datasheet

N-Channel 60-V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
VDS(min) (V)
RDS(on) ()
60 1.40 at VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
500
S1 1
SC-89
6 D1
G1 2
D2 3
5 G2
4 S2
Marking Code: E
Top View
Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 1.40
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
320 305
230 220
Pulsed Drain Currentb
IDM - 650
Continuous Source Current (Diode Conduction)a
IS 450 380
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280 250
145 130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
°C
V
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1026X Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

Si1026X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltagea
RDS(on)
gfs
VSD
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 5 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 85 °C
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 200 mA
VGS = 10 V, ID = 500 mA
VGS = 10 V, ID = 500 mA, TJ = 125 °C
VDS = 10 V, ID = 200 mA
VGS = 0 V, IS = 200 mA
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb, c
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 10 V, ID = 250 mA, VGS = 4.5 V
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Turn-On Time
Turn-Off Time
t(on) VDD = 30 V, RL = 150
t(off) ID = 200 mA, VGEN = 10 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min.
60
1
500
800
Typ.
Max.
Unit
2.5
± 150
± 50
1
10
V
nA
µA
mA
3.0
1.40
2.50
200 mS
1.40 V
600
120 pC
225
30
6 pF
3
15
ns
20
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10


Part Number SI1026X
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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