900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI1026X Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

New Product
N-Channel 60-V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) (W)
60 1.40 @ VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
500
FEATURES
BENEFITS
D Low On-Resistance: 1.40 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 15 ns (typ)
D Low Input and Output Leakage
D Miniature Package
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
S1 1
SC-89
6 D1
G1 2
D2 3
5 G2
4 S2
Top View
Marking Code: E
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Continuous Source Current (diode conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
60
"20
320 305
230 220
–650
450 380
280 250
145 130
–55 to 150
2000
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
_C
V
Document Number: 71434
S-03518β€”Rev. A, 23-Apr-01
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1026X Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

Si1026X
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb, c
Qg
Qgs
Qgd
Ciss
Coss
Crss
Turn-On Time
Turn-Off Time
t(on)
t(off)
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Test Conditions
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = "10 V
VDS = 0 V, VGS = "5 V
VDS = 50 V, VGS = 0 V
TJ = 85_C
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 200 mA
VGS = 10 V, ID = 500 mA
TJ = 125_C
VDS = 10 V, ID = 200 mA
VGS = 0 V, IS = 200 mA
VDS =10 V, ID = 250 mA
VGS = 4.5 V
VDS = 25 V, VGS = 0 V
f = 1 MHz
VDD = 30 V, RL = 150 W
ID = 200 mA, VGEN = 10 V
RG = 10 W
Min
60
1
500
800
Limits
Typ
Max
2.5
"150
"50
10
100
3.0
1.40
2.50
200
1.40
600
120
225
30
6
3
15
20
Unit
V
nA
mA
W
mS
V
pC
pF
ns
www.vishay.com
2
Document Number: 71434
S-03518β€”Rev. A, 23-Apr-01


Part Number SI1026X
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI1026X Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 Si1026 10-Bit ADC MCU
Silicon Laboratories
2 SI1026X N-Channel 60-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy