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Vishay Intertechnology Electronic Components Datasheet

SI1013X Datasheet

P-Channel 1.8-V (G-S) MOSFET

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Si1013R/X
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
1.2 @ VGS = –4.5 V
–20 1.6 @ VGS = –2.5 V
2.7 @ VGS = –1.8 V
ID (mA)
–350
–300
–150
FEATURES
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
S2
3D
Ordering Information:
SC-75A (SOT– 416):
Si1013R–Marking Code : D
SC-89 (SOT– 490):
Si1013X–Marking Code: B
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
–20
–400
"6
–350
–300
–275
175
90
275
160
–275
–1000
–250
150
80
250
140
–55 to 150
2000
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
Unit
V
mA
mW
_C
V
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Vishay Intertechnology Electronic Components Datasheet

SI1013X Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1013R/X
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "4.5 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 350 mA
VGS = 2.5 V, ID = 300 m A
VGS = 1.8 V, ID = 150 m A
VDS = 10 V, ID = 250 mA
IS = 150 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
VDD = 10 V, RL = 47 W
ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
0.45
700
Typ
"1
0.3
0.8
1.2
1.8
0.4
0.8
1500
150
450
5
9
35
11
Max Unit
"2
100
5
1.2
1.6
2.7
1.2
V
mA
nA
mA
mA
W
S
V
pC
ns
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
1.0
VGS = 5 thru 3 V
0.8
Output Characteristics
2.5 V
1000
800
Transfer Characteristics
TJ = 55_C
25_C
0.6 600 125_C
2V
0.4 400
1.8 V
0.2 200
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VDS Drain-to-Source Voltage (V)
3.0
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2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
Document Number: 71167
S-02464Rev. A, 25-Oct-00


Part Number SI1013X
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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