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Vishay Intertechnology Electronic Components Datasheet

SI1012R Datasheet

N-Channel 1.8-V (G-S) MOSFET

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Si1012R, Si1012X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.70 at VGS = 4.5 V
20 0.85 at VGS = 2.5 V
1.25 at VGS = 1.8 V
SC-75A or SC-89
G1
ID (mA)
600
500
350
3D
S2
Top View
ORDERING INFORMATION
Part Number
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Package
SC-75A
(SOT-416)
SC-89
(SOT-490)
Marking
Code
C
A
FEATURES
• TrenchFET® Power MOSFET: 1.8 V Rated
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
±6
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 85 °C
ID
600
400
500
350
Pulsed Drain Currenta
IDM 1000
Continuous Source Current (Diode Conduction)b
IS 275
250
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
PD
175
90
275
160
150
80
250
140
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
Unit
V
mA
mW
°C
V
Document Number: 71166
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0786-Rev. E, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SI1012R Datasheet

N-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1012R, Si1012X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea RDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 350 mA
VDS = 10 V, ID = 400 mA
IS = 150 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
VDD = 10 V, RL = 47
ID 200 mA, VGEN = 4.5 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.45
700
Typ.
± 0.5
0.3
Max.
0.9
±1
100
5
0.41
0.53
0.70
1
0.8
0.70
0.85
1.25
1.2
750
75
225
5
5
25
11
Unit
V
µA
nA
µA
mA
S
V
pC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71166
2 S13-0786-Rev. E, 15-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SI1012R
Description N-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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