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SI1012R Datasheet

N-Channel 1.8-V (G-S) MOSFET

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N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.70 @ VGS = 4.5 V
20 0.85 @ VGS = 2.5 V
1.25 @ VGS = 1.8 V
ID (mA)
600
500
350
FEATURES
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 10 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
S2
3D
Ordering Information:
SC-75A (SOT– 416):
Si1012R–Marking Code : C
SC-89 (SOT– 490):
Si1012X–Marking Code: A
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
20
"6
600 500
400 350
1000
275 250
175 150
90 80
275 250
160 140
–55 to 150
2000
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71166
S-02464—Rev. A, 25-Oct-00
Unit
V
mA
mW
_C
V
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Vishay Intertechnology Electronic Components Datasheet

SI1012R Datasheet

N-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1012R/X
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "4.5 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 m A
VGS = 1.8 V, ID = 350 m A
VDS = 10 V, ID = 400 mA
IS = 150 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
VDD = 10 V, RL = 47 W
ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.45
700
"0.5
0.3
0.41
0.53
0.70
1.0
0.8
"1.0
100
5
0.70
0.85
1.25
1.2
V
mA
nA
mA
mA
W
S
V
750
75 pC
225
5
5
ns
25
11
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Output Characteristics
1.0
0.8
VGS = 5 thru 1.8 V
0.6
0.4
0.2
0.0
0.0
1V
0.5 1.0 1.5 2.0 2.5
VDS Drain-to-Source Voltage (V)
3.0
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2
1200
1000
800
600
400
200
0
0.0
Transfer Characteristics
TC = 55_C
25_C
125_C
0.5 1.0 1.5 2.0
VGS Gate-to-Source Voltage (V)
2.5
Document Number: 71166
S-02464Rev. A, 25-Oct-00


Part Number SI1012R
Description N-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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