IRL510 mosfet equivalent, power mosfet.
* Dynamic dV/dt rating
* Repetitive avalanche rated
Available
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 175 °C operating.
at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contr.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industri.
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