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IRFU9022 - Power MOSFET

Download the IRFU9022 datasheet PDF. This datasheet also covers the IRFR9022 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors.

Features

  • - 50 0.33 www. DataSheet4U. com.
  • Surface Mountable (Order as IRFR9022/SiHFR9022) Available Straight Lead Option (Order as IRFU9022/SiHFU9022) RoHS.
  • Repetitive Avalanche Ratings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR9022_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU9022 P-Channel Transistors International Rectifier
IRFU9020 P-Channel Transistors International Rectifier
IRFU9020 P-Channel Power MOSFETS Samsung Electronics
IRFU9024 P-Channel Power MOSFETS Samsung Electronics
IRFU9024 Power MOSFET IRF

Other Datasheets by Vishay

Part Number Description
IRFU9020 Power MOSFET
IRFU9024 Power MOSFET
IRFU9014 Power MOSFET
IRFU9110 Power MOSFET
IRFU9120 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 14 6.5 6.5 Single S FEATURES - 50 0.33 www.DataSheet4U.com • • • • • • • Surface Mountable (Order as IRFR9022/SiHFR9022) Available Straight Lead Option (Order as IRFU9022/SiHFU9022) RoHS* Repetitive Avalanche Ratings COMPLIANT Dynamic dV/dt Rating Simple Drive Requirements Ease of Paralleling Lead (Pb)-free Available DESCRIPTION DPAK (TO-252) IPAK (TO-251) G D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors.
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