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IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
S G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
0.27
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR120, SiHFR120)
• Straight lead (IRFU120, SiHFU120)
• Available in tape and reel • Fast switching
Available
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.