BA892V-02V Datasheet | Vishay

Description The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward current the forward resistance rf can be switched far below 1 Ω, so that the Switch is closed. To open the Switch, the BA892V02V has to be driven in the reverse mode where the BA892V-02V behaves like a small capacitor with high isolation. So typical applications for this Band Switching Diode are mobile and TV-applications. Features - Low forward resistance - Small, space saving SOD523 package with low series inductance - Small capacitance Applications - Band switching up to 3 GHz - Low loss band-switching in TV/VTR tuners Parts Table Part BA892V-02V Ordering code BA892V-02V-GS08 A Marking Remarks Tape and Reel Package SOD523 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Sub type Symbol VR IF Tj Tstg Value 35 100 150 -55 to +150 Unit V m A °C °C Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Test condition Symbol Rth JS Value 100 Unit K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition IR = 10 µA Sub type Symbol VR Min 35 Typ. Max Unit V Document Number 85640 Rev. 1, 26-Sep-02 .vishay. 1 Vishay Semiconductors Parameter Reverse current Forward voltage Diode capacitance VR = 20 V IF = 100 m A f = 1 MHz, V R = 0 f = 1 MHz, V R = 1 V f = 1 MHz, V R = 3 V Forward resistance f = 100 MHz, IF = 1 m A f = 100 MHz, IF = 3 m A f = 100 MHz, IF = 10 m A Charge carrier life time IF = 10 m A, IR = 6 m A, i R = 3 m A Test condition Sub type Symbol IR VF CD CD CD rf rf rf trr 1.1 0.9 0.82 0.7 0.5 0.38 100 Min Typ. VISHAY Max 20 1.1 1.2 1.1 0.7 0.5 Unit n A V p F p F p F Ω...