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Vishay Intertechnology Electronic Components Datasheet

VTS40100CT Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.375 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VTS40100CT
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF40100C
3
2
1
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
VI40100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
Tj max.
2 x 20 A
100 V
250 A
0.61 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 seconds (for TO-220AB,
ITO-220AB & TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VTS40100CT VF40100C VB40100C VI40100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
VRRM
IF(AV)
100
40
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
UNIT
V
A
A
V
°C
Document Number: 88926
Revision: 02-Aug-07
www.vishay.com
1
Free Datasheet http://www.Datasheet4U.com


Vishay Intertechnology Electronic Components Datasheet

VTS40100CT Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
at IF = 5 A
Instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
at IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.463
0.535
0.664
0.375
0.445
0.605
Reverse current at rated VR per diode (2)
at VR = 70 V
TA = 25 °C
TA = 125 °C
at VR = 100 V
TA = 25 °C
TA = 125 °C
IR
13.7
8.4
69.6
22.5
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
MAX.
-
-
0.73
-
-
0.67
-
-
1000
45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VTS40100CT VF40100C
Typical thermal resistance per diode
RθJC
2.0
4.0
VB40100C
2.0
VI40100C
2.0
UNIT
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VTS40100CT-E3/45
1.85
ITO-220AB
VF40100C-E3/45
1.80
TO-263AB
VB40100C-E3/4W
1.39
TO-263AB
VB40100C-E3/8W
1.39
TO-262AA
VI40100C-E3/4W
1.46
PACKAGE CODE
45
45
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
50
VI40100C
40 VB40100C
VTS40100CT
30 VF40100C
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
18
16
D = 0.8
14 D = 0.5
D = 0.3
12
10 D = 0.2
D = 1.0
8 D = 0.1
6
T
4
2 D = tp/T tp
0
0 5 10 15 20 25
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
Document Number: 88926
Revision: 02-Aug-07
Free Datasheet http://www.Datasheet4U.com


Part Number VTS40100CT
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 5 Pages
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