* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRI.

VT6045C

VT6045C-M3

VT6045CHM3

VT60M45C-M3

VT60M45CHM3

VT6102

VT6103

VT6105

VT6130

VT6202

VT6208

VT6208L

VT6212

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