* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN.

VT4045BP-M3

VT4045C

VT4045C-M3

VT4045CHM3

VT400

VT4060C

VT4060C-E3

VT43N1

VT43N2

VT43N3

VT43N4

VT4T5UF2021

VT-120-F

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