* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRI.

VT2045C

VT2045C-M3

VT2045CHM3

VT2045BP

VT200

VT2021

VT2060C

VT2060C-E3

VT2060G

VT2060G-E3

VT2080C

VT2080C-E3

VT2080S

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