VSB20L45 - Photovoltaic Solar Cell Protection Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ®.
Low forward voltage drop, low power losses.
High efficiency operation.
High forward surge capability.
ESD capability P600.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
TJ 200 °C max. in solar by-pass mode.

VSB20L45 photovoltaic solar cell protection schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VSB20L45
Manufacturer	Vishay
File Size	151.14 KB
Description	Photovoltaic Solar Cell Protection Schottky Rectifier
Datasheet	VSB20L45 Datasheet

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VSB20L45 www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.26 V at IF = 5 A FEATURES • Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • ESD capability P600 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Compliant to RoHS Directive 2011/65/EU • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 20 A TOP max. (AC mode) TJ max. (DC forward current) 20 A 45 V 250 A 0.40 V 150 °C 200 °C TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.