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VS-GA200SA60UP - IGBT

Features

  • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode.
  • Very low conduction and switching losses.
  • Fully isolate package (2500 VAC/RMS).
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Designed and qualified for industrial level.
  • Material categorization: for definitions of compliance please see www. vishay. com/.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) (typical) VGE IC Speed 600 V 1.92 V 15 V 100 A 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.
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