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VS-FB190SA10 - Power MOSFET

Description

High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.

Features

  • Fully isolated package.
  • Very low on-resistance.
  • Fully avalanche rated.
  • Dynamic dV/dt rating.
  • Low drain to case capacitance.
  • Low internal inductance.
  • Optimized for SMPS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications SOT-227 • Easy to use and parallel • Industry standard outline • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 100 V 190 A 0.
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