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VI40M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®.
  • Trench MOS Schottky technology TO-262AA.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPIC.

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Datasheet Details

Part number VI40M120C
Manufacturer Vishay
File Size 783.78 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI40M120C Datasheet

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Full PDF Text Transcription (Reference)

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New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.