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VI20120C-E3 Datasheet, Vishay

VI20120C-E3 rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.

VI20120C-E3 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 204.14KB)

VI20120C-E3 Datasheet
VI20120C-E3
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 204.14KB)

VI20120C-E3 Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1.

Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and .

Image gallery

VI20120C-E3 Page 1 VI20120C-E3 Page 2 VI20120C-E3 Page 3

TAGS

VI20120C-E3
Dual
High
Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

Manufacturer


Vishay (https://www.vishay.com/)

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