* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MEC.

VFT4045C

VFT4045C-M3

VFT4060C

VFT45-28

VFT10200C

VFT10200C-E3

VFT1045BP

VFT1045C

VFT1045CBP

VFT1060C

VFT1060C-E3

VFT1080C

VFT1080S

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