• Part: VF30120S
  • Description: High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 223.86 KB
Download VF30120S Datasheet PDF
Vishay
VF30120S
VF30120S is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for mercial grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB30120S NC A K HEATSINK VI30120S PIN 1 PIN 2 K PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 120 V 300 A 0.74 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V30120S VF30120S 120 30 300 1500 - 40 to + 150 VB30120S VI30120S UNIT V A A V °C Document Number: 88974 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay., PDD-Asia@vishay., PDD-Europe@vishay. .vishay. 1 Datasheet pdf - http://..net/ .Data Sheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 m A IF...