VF30100S Datasheet PDF (High-Voltage Trench MOS Barrier Schottky Rectifier)

VF30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 123 VF30100S PIN 1 PIN 2 PIN 3.

Datasheet Details

Part number	VF30100S
Manufacturer	Vishay
File Size	81.19 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VF30100S Datasheet
Additional preview pages of the VF30100S datasheet.

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Full PDF Text Transcription

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www.vishay.com VF30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 123 VF30100S PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 100 V 250 A VF at IF = 30 A 0.69 V TJ max. 150 °C Package ITO-220AB Diode variation Single diode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.

Published: Feb 2, 2012 |