VF20150SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Features

• Trench MOS Schottky technology.
• Low forward voltage drop, low power losses.
• High efficiency operation.
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
• Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.