* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum p.

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRI.

VBT2045C

VBT2045C-E3

VBT2045BP

VBT2060C-E3

VBT2060G

VBT2060G-E3

VBT2080C-E3

VBT2080S-E3

VBT2080S-M3

VBT10200C

VBT10200C-E3

VBT10202C-M3

VBT1045BP

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