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VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT1045C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.
VBT1045C Datasheet
