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VB30M120C Datasheet, Vishay

VB30M120C rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.

VB30M120C Avg. rating / M : 1.0 rating-11

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VB30M120C Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maxim.

Application

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Mod.

Image gallery

VB30M120C Page 1 VB30M120C Page 2 VB30M120C Page 3

TAGS

VB30M120C
Dual
High
Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

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