VB30M120C rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maxim.
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
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