logo

VB20M120C-M3 Datasheet, Vishay

VB20M120C-M3 rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.

VB20M120C-M3 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 88.34KB)

VB20M120C-M3 Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ord.

Application

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECH.

Image gallery

VB20M120C-M3 Page 1 VB20M120C-M3 Page 2 VB20M120C-M3 Page 3

TAGS

VB20M120C-M3
Dual
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts