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V8PM10S - Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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Datasheet Details

Part number V8PM10S
Manufacturer Vishay
File Size 101.29 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V8PM10S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V8PM10S Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 8A 100 V 120 A VF at IF = 8 A (125 °C) 0.62 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.
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