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V80170PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 10 A
TMBS®
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
TO-3PW
PIN 1 PIN 3
PIN 2 CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 40 A TJ max.
2 x 40 A 170 V 280 A 0.
V80170PW Datasheet
