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V60DM100C
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.40 V at IF = 5.0 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
Anode 1 Anode 2
K Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
FEATURES
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.
V60DM100C Datasheet
